Semiconductors
Semiconductor prior art search
Search prior art for semiconductor inventions: device structures, fabrication processes, packaging, and materials.
Related semiconductors patents
- US7659582B2Sharp Laboratories Of America, Inc.Published 2010-02-09
A system and method for hydrogen (H) exfoliation are provided for attaching silicon-on-insulator (SOI) fabricated circuits to carrier substrates. The method comprises: providing a SOI substrate, including a silicon (Si) active layer and buried oxide (BOX) layer overlying a Si substrate; forming a ...
- US7745269B2Semiconductor Energy Laboratory Co., Ltd.Published 2010-06-29
An object is to provide an element structure of a semiconductor device for increasing an etching margin for various etching steps and a method for manufacturing the semiconductor device having the element structure. An island-shaped semiconductor layer is provided over an insulator having openings ...
- US8674481B2Sharp Laboratories Of America, Inc.Published 2014-03-18
A hydrogen (H) exfoliation gettering method is provided for attaching fabricated circuits to receiver substrates. The method comprises: providing a Si substrate; forming a Si active layer overlying the substrate with circuit source/drain (S/D) regions; implanting a p-dopant into the S/D regions;
- WO2019014966A1武汉华星光电半导体显示技术有限公司Published 2019-01-24
Provided is a method for preparing a polysilicon thin film, the method comprising: applying a semiconductor deposition process so as to prepare and form a first amorphous silicon thin film (2a); applying an excimer laser annealing process to crystallize the first amorphous silicon thin film (2a) ...
- CN108122733B台湾积体电路制造股份有限公司Published 2022-04-08
A method of manufacturing a semiconductor element. A semiconductor device including a field effect transistor (FET) device includes a substrate and a channel structure formed of a two-dimensional material. An interface layer is formed on the channel structure. A gate stack is formed above the ...
- CN113614897BQorvo美国公司Published 2025-09-26
The present disclosure relates to a Radio Frequency (RF) device that includes a molding-device die and a multi-layer redistribution structure located beneath the molding-device die. The molding-device die includes a device region having a back-end-of-line (BEOL) portion and a front-end-of-line ( ...
- WO2023133480A3Cirrus Logic International Semiconductor Ltd.Published 2023-08-31
An integrated circuit (IC) substrate manufacturing process provides time-dependent device characteristic variation due to hydrogen absorption by including one or more gettering layers near the devices that would otherwise absorb hydrogen and exhibit the variation as the hydrogen migrates in the ...
- US10573746B2International Business Machines CorporationPublished 2020-02-25
Low temperature epitaxial silicon deposition for forming the top source or drain regions of VTFET structures. The methods generally include epitaxially growing a silicon layer with a dopant at a temperature less 500° C. on a first surface and an additional surface to form a single crystalline ...
Search your own semiconductors idea
Describe your invention in plain language with its key technical features. Persoona queries Google Patents and ranks the closest results.
Why a prior art search matters for semiconductors
Semiconductor portfolios are large and defensive, so a prior-art read informs both patentability and cross-licensing exposure. It also surfaces the closest process steps you will need to distinguish.
- Process and structure claims have different closest art; search each.
- Conference proceedings (for example IEDM, VLSI) are common prior art alongside patents.
- Tiny dimensional or material differences often carry the novelty.