Semiconductors
Semiconductor prior art search
Search prior art for semiconductor inventions: device structures, fabrication processes, packaging, and materials.
Related semiconductors patents
- Sharp Laboratories Of America, Inc.Published 2010-02-09
A system and method for hydrogen (H) exfoliation are provided for attaching silicon-on-insulator (SOI) fabricated circuits to carrier substrates. The method comprises: providing a SOI substrate, including a silicon (Si) active layer and buried oxide (BOX) layer overlying a Si substrate; forming a …
- Semiconductor Energy Laboratory Co., Ltd.Published 2010-06-29
An object is to provide an element structure of a semiconductor device for increasing an etching margin for various etching steps and a method for manufacturing the semiconductor device having the element structure. An island-shaped semiconductor layer is provided over an insulator having openings …
- Sharp Laboratories Of America, Inc.Published 2014-03-18
A hydrogen (H) exfoliation gettering method is provided for attaching fabricated circuits to receiver substrates. The method comprises: providing a Si substrate; forming a Si active layer overlying the substrate with circuit source/drain (S/D) regions; implanting a p-dopant into the S/D regions;
- 武汉华星光电半导体显示技术有限公司Published 2019-01-24
Provided is a method for preparing a polysilicon thin film, the method comprising: applying a semiconductor deposition process so as to prepare and form a first amorphous silicon thin film (2a); applying an excimer laser annealing process to crystallize the first amorphous silicon thin film (2a) …
- 台湾积体电路制造股份有限公司Published 2022-04-08
A method of manufacturing a semiconductor element. A semiconductor device including a field effect transistor (FET) device includes a substrate and a channel structure formed of a two-dimensional material. An interface layer is formed on the channel structure. A gate stack is formed above the …
- Qorvo美国公司Published 2025-09-26
The present disclosure relates to a Radio Frequency (RF) device that includes a molding-device die and a multi-layer redistribution structure located beneath the molding-device die. The molding-device die includes a device region having a back-end-of-line (BEOL) portion and a front-end-of-line ( …
- International Business Machines CorporationPublished 2020-02-25
Low temperature epitaxial silicon deposition for forming the top source or drain regions of VTFET structures. The methods generally include epitaxially growing a silicon layer with a dopant at a temperature less 500° C. on a first surface and an additional surface to form a single crystalline …
- Qorvo美国公司Published 2025-09-19
The present disclosure relates to a radio frequency device including a transfer device die and a multi-layer redistribution structure located beneath the transfer device die. The transfer device die includes a device region having a back end of line (BEOL) portion and a front end of line (FEOL) …
Search your own semiconductors idea
Describe your invention in plain language with its key technical features. Persoona queries Google Patents and ranks the closest results.
Why a prior art search matters for semiconductors
Semiconductor portfolios are large and defensive, so a prior-art read informs both patentability and cross-licensing exposure. It also surfaces the closest process steps you will need to distinguish.
- Process and structure claims have different closest art; search each.
- Conference proceedings (for example IEDM, VLSI) are common prior art alongside patents.
- Tiny dimensional or material differences often carry the novelty.